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PD - 95620
SMPS MOSFET
IRFB38N20DPBF IRFS38N20D IRFSL38N20D
HEXFET(R) Power MOSFET
Applications High frequency DC-DC converters l TO-220 is available in PbF as LeadFree
l
VDSS
200V
RDS(on) max
0.054
ID
44A
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
l
D2Pak TO-220AB IRFB38N20DPBF IRFS38N20D
TO-262 IRFSL38N20D
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
44 32 180 3.8 320 2.1 30 9.5 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V V/ns C
Thermal Resistance
Parameter
RJC RCS RJA RJA Notes through Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient are on page 11
Typ.
--- 0.50 --- ---
Max.
0.47 --- 62 40
Units
C/W
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1
8/10/04
IRFB38N20DPBF IRFS/SL38N20D
V(BR)DSS
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 --- --- 3.0 --- --- --- --- Typ. --- 0.22 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.054 VGS = 10V, ID = 26A 5.0 V VDS = VGS, ID = 250A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 17 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 60 17 28 16 95 29 47 2900 450 73 3550 180 380 Max. Units Conditions --- S VDS = 50V, ID = 26A 91 ID = 26A 25 nC VDS = 100V 42 VGS = 10V, --- VDD = 100V --- ID = 26A ns --- R G = 2.5 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 160V, = 1.0MHz --- VGS = 0V, VDS = 0V to 160V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
460 26 32
Units
mJ A mJ
Diode Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 44 --- --- showing the A G integral reverse --- --- 180 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 26A, VGS = 0V --- 160 240 nS TJ = 25C, IF = 26A --- 1.3 2.0 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFB38N20DPBF IRFS/SL38N20D
1000
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
100
10
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
5.0V
10
1
1
5.0V 300s PULSE WIDTH Tj = 25C
0.1 0.1 1 10 100
0.1 0.1 1
300s PULSE WIDTH Tj = 175C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
3.5
I D = 44A
ID, Drain-to-Source Current ( )
3.0
RDS(on) , Drain-to-Source On Resistance
T J = 25C T J = 175C
2.5
100.00
(Normalized)
2.0
1.5
10.00
1.0
VDS = 15V
1.00 5.0 7.0 9.0
0.5
300s PULSE WIDTH
11.0 13.0 15.0
0.0 -60 -40 -20 0 20 40 60 80
V GS = 10V
100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature
( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFB38N20DPBF IRFS/SL38N20D
100000
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd
12 10 8 6 4 2 0
ID = 26A VDS = 160V VDS = 100V
10000
C, Capacitance(pF)
Ciss
1000
Coss
100
Crss
10 1 10 100 1000
0
10
20
30
40
50
60
70
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA LIMITED BY R DS (on)
100.00
T J = 175C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100sec 10 1msec 1 Tc = 25C Tj = 175C Single Pulse 1 10 100
10.00 T J = 25C 1.00 VGS = 0V 0.10 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-toDrain Voltage (V)
10msec
0.1
1000
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFB38N20DPBF IRFS/SL38N20D
50
V DS VGS
RD
40
RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-VDD
ID , Drain Current (A)
30
20
Fig 10a. Switching Time Test Circuit
10
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1
(Z thJC )
D = 0.50
0.1
0.20 0.10
Thermal Response
0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE)
P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T t1 / t 2 +TC 1
J = P DM x Z thJC
0.001 0.00001
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFB38N20DPBF IRFS/SL38N20D
15V
900
TOP
RG
20V
D.U.T
IAS tp
+ V - DD
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
DRIVER
720
BOTTOM
ID 11A 19A 26A
540
A
0.01
360
Fig 12a. Unclamped Inductive Test Circuit
180
V(BR)DSS tp
0 25 50 75 100 125 150 175
Starting Tj, Junction Temperature
( C)
I AS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K 12V .2F .3F
10 V
QGS
QGD
VGS
3mA
D.U.T.
+ V - DS
VG
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFB38N20DPBF IRFS/SL38N20D
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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IRFB38N20DPBF IRFS/SL38N20D
TO-220AB Package Outline
10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240)
Dimensions are shown in millimeters (inches)
-B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
2.87 (.113) 2.62 (.103)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN
LEAD ASSIGNMENTS
HEXFET
14.09 (.555) 13.47 (.530)
4- DRAIN
4.06 (.160) 3.55 (.140)
4- COLLECTOR
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
2.92 (.115) 2.64 (.104)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R
Note: "P" in assembly line position indicates "Lead-Free"
DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C
8
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IRFB38N20DPBF IRFS/SL38N20D
Dimensions are shown in millimeters (inches)
D2Pak Package Outline
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 5 3 0 S W IT H L O T CO D E 8 0 2 4 AS S E M B L E D O N W W 0 2 , 2 0 0 0 IN T H E AS S E M B L Y L IN E "L " N ote: "P " in as s em bly lin e po s i tion in dicates "L ead-F r ee" IN T E R N AT IO N AL R E CT IF IE R L O GO AS S E M B L Y L O T CO D E P AR T N U M B E R F 53 0 S D AT E CO D E Y E AR 0 = 2 0 0 0 W E E K 02 L IN E L
OR
IN T E R N AT IO N AL R E C T IF IE R L O GO AS S E M B L Y L OT COD E P AR T N U M B E R F 530S D AT E CO D E P = D E S IG N AT E S L E AD -F R E E P R O D U C T (O P T IO N AL ) Y E AR 0 = 2 0 0 0 W E E K 02 A = AS S E M B L Y S IT E CO D E
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IRFB38N20DPBF IRFS/SL38N20D
TO-262 Package Outline
TO-262 Part Marking Information
E X AMP L E : T H IS IS AN IR L 3 1 03 L L OT COD E 17 8 9 AS S E M B L E D ON WW 19 , 1 9 97 IN T H E AS S E MB L Y L IN E "C" N ote: "P " in as s em bly line pos ition indicates "L ead-F ree" IN T E R N AT ION AL R E CT IF I E R L OGO AS S E M B L Y L OT COD E P AR T N U MB E R
D AT E COD E Y E AR 7 = 1 9 97 WE E K 19 L IN E C
OR
IN T E R N AT ION AL R E CT IF I E R L OGO AS S E M B L Y L OT COD E P AR T N U MB E R D AT E COD E P = D E S I GN AT E S L E AD -F R E E P R OD U CT (OP T ION AL ) Y E AR 7 = 1 9 9 7 WE E K 19 A = AS S E MB L Y S IT E COD E
10
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D2Pak Tape & Reel Infomation
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
IRFB38N20DPBF IRFS/SL38N20D
1.60 (.063) 1.50 (.059)
0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
Notes:
Repetitive rating; pulse width limited by
Coss eff. is a fixed capacitance that gives the same charging time max. junction temperature. as Coss while VDS is rising from 0 to 80% VDSS . Starting TJ = 25C, L = 1.3mH This is only applied to TO-220AB package. RG = 25, IAS = 26A. This is applied to D2Pak, when mounted on 1" square PCB ISD 26A, di/dt 390A/s, VDD V(BR)DSS, (FR-4 or G-10 Material ). For recommended footprint and soldering TJ 175C. techniques refer to application note #AN-994. Pulse width 300s; duty cycle 2%.
TO-220 package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] (IRFB38N20D), & Industrial (IRFS/SL38N20D) market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/04
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